Molecular beam epitaxy (MBE) is a very precise deposition method for single crystal thin film growth. It can be used to deposit various materials, such as metals, semiconductors, magnetic materials, oxide and chalcogenide layers, organic molecules, and more. LAB-10 MBE system (Omicron Nanotechnology GmbH) at JSI is used for growth of transition metal dichalcogenides (TaS2, MoS2,…). The growth takes place in a UHV chamber where source materials are evaporated and emitted onto a substrate. Temperature controller, shutters, beam flux monitor, thickness monitor and RHEED system (Reflection High-Energy Electron Diffraction) allow for in-situ monitoring and control of the evaporation and growth. The thickness of grown films ranges from single layers to several tens of nm.