Department of complex matter

Molecular beam epitaxy system – MBE

Molecular beam epitaxy (MBE) is a very precise deposition method for single crystal thin film growth. It can be used to deposit various materials, such as metals, semiconductors, magnetic materials, oxide and chalcogenide layers, organic molecules, and more. LAB-10 MBE system (Omicron Nanotechnology GmbH) at JSI is used for growth of transition metal dichalcogenides (TaS2, MoS2,…). The growth takes place in a UHV chamber where source materials are evaporated and emitted onto a substrate. Temperature controller, shutters, beam flux monitor, thickness monitor and RHEED system (Reflection High-Energy Electron Diffraction) allow for in-situ monitoring and control of the evaporation and growth. The thickness of grown films ranges from single layers to several tens of nm.

Responsible Person:

  • dr. Jure Strle

    Department for Complex Matter                   
    Jožef Stefan Institute                                   
    Jamova 39                                                   
    SI-1000 Ljubljana                                        
    Slovenia

     

    Room: C 214
    Tel: + 386 1 477 3553
    Fax: + 386 1 477 3998
    jure.strle@ijs.si